IXTY1N120PTRL
MOSFET N-CH 1200V 1A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY1N120PTRL is a high-voltage N-Channel Power MOSFET from the Polar series, designed for demanding applications. This device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 1 A at 25°C, with a maximum power dissipation of 63 W at the same temperature. The on-resistance (Rds On) is specified at 20 Ohms maximum for an Id of 500 mA and Vgs of 10 V. Key parameters include a gate charge (Qg) of 17.6 nC maximum and input capacitance (Ciss) of 445 pF maximum. The IXTY1N120PTRL utilizes surface mount technology, housed in a TO-252AA (DPAK) package for efficient thermal management. It operates across a temperature range of -55°C to 150°C. This component is suitable for power conversion and control applications in industries such as industrial power supplies and renewable energy systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PolarRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 445 pF @ 25 V |
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