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IXTY12N06TTRL

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IXTY12N06TTRL

MOSFET N-CH 60V 12A TO252

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTY12N06TTRL is an N-channel power MOSFET from the TrenchMV™ series. This device offers a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc), with a maximum power dissipation of 33W (Tc). It features a low on-resistance (Rds On) of 85mOhm maximum at 6A and 10V gate-source voltage. The MOSFET has a gate charge (Qg) of 3.4 nC at 10V and an input capacitance (Ciss) of 256 pF at 25V. Designed for surface mounting, it comes in a TO-252AA package, supplied on tape and reel. The operating temperature range is -55°C to 175°C. This component is utilized in applications such as power switching, motor control, and power supplies.

Additional Information

Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs85mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)33W (Tc)
Vgs(th) (Max) @ Id4V @ 25µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds256 pF @ 25 V

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