IXTY12N06T
MOSFET N-CH 60V 12A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS presents the IXTY12N06T, an N-Channel power MOSFET from the TrenchMV™ series, designed for robust performance. This component offers a 60V drain-source voltage and a continuous drain current capability of 12A at 25°C, with a maximum power dissipation of 33W. Featuring a low on-resistance of 85mOhm at 6A and 10V, it ensures efficient power switching. The IXTY12N06T utilizes advanced MOSFET technology with a typical gate charge of 3.4 nC and input capacitance of 256 pF, facilitating fast switching speeds. Its TO-252AA surface mount package is suitable for various applications including automotive, industrial power control, and high-frequency switching power supplies. The device operates across a wide temperature range from -55°C to 175°C.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 256 pF @ 25 V |
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