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IXTY06N120P

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IXTY06N120P

MOSFET N-CH 1200V 90A TO252

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTY06N120P is a high-voltage N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 90 A at 25°C (Tc), this component offers robust performance. Its surface mount TO-252AA package, also known as DPAK, facilitates efficient thermal management and automated assembly processes. This MOSFET is suitable for use in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and industrial motor control systems. The IXYS IXTY06N120P is manufactured by IXYS and is packaged in a tube for distribution.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs-
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-252AA
Drain to Source Voltage (Vdss)1200 V

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