IXTY02N50D
MOSFET N-CH 500V 200MA TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTY02N50D, a Depletion mode N-Channel Power MOSFET, offers a 500V drain-source breakdown voltage and 200mA continuous drain current at 25°C (Tc). This TO-252AA surface-mount device features a maximum on-resistance of 30 Ohms at 50mA and 0V gate-source voltage. With a gate-source voltage tolerance of ±20V and input capacitance of 120pF at 25V, it is suitable for applications requiring precise control. The IXTY02N50D has a maximum power dissipation of 1.1W (Ta) or 25W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). It finds application in power switching and control circuits across various industrial sectors.
Additional Information
Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Rds On (Max) @ Id, Vgs | 30Ohm @ 50mA, 0V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.1W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-252AA |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
| Qualification | - |
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