IXTY01N80
MOSFET N-CH 800V 100MA TO252AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTY01N80 is an N-Channel Power MOSFET designed for demanding applications. This component features a high Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 100 mA at 25°C, with a maximum power dissipation of 25 W. The Rds(On) is rated at 50 Ohms maximum at 100 mA and 10 V gate drive. With a gate charge (Qg) of 8 nC at 10 V and input capacitance (Ciss) of 60 pF at 25 V, this device offers efficient switching characteristics. It is housed in a TO-252AA (DPAK) surface mount package for streamlined PCB integration. Operating temperature range is -55°C to 150°C (TJ). This device is suitable for power conversion and control circuits across various industrial segments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Tc) |
| Rds On (Max) @ Id, Vgs | 50Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
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