IXTY01N100-TRL
MOSFET N-CH 1000V 100MA TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTY01N100-TRL is a surface-mount N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 100mA at 25°C, with a maximum power dissipation of 25W (Tc). The Rds On is specified at a maximum of 80 Ohms when Id is 50mA and Vgs is 10V. Key parameters include a gate charge (Qg) of 6.9 nC (max) at 10V and an input capacitance (Ciss) of 54 pF (max) at 25V. The device operates within an extended temperature range of -55°C to 150°C (TJ) and is housed in a TO-252AA (DPAK) package. This MOSFET is suitable for power supply applications, high-voltage switching, and general-purpose high-voltage switching in industrial and consumer electronics. The IXYS IXTY01N100-TRL is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Tc) |
| Rds On (Max) @ Id, Vgs | 80Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 54 pF @ 25 V |
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