IXTX8N150L
MOSFET N-CH 1500V 8A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTX8N150L is an N-channel Power MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 1500V and a continuous drain current capability of 8A at 25°C, this component offers a maximum on-resistance (Rds On) of 3.6 Ohms at 4A and 20V gate drive. The device exhibits a low gate charge (Qg) of 250 nC at 15V and an input capacitance (Ciss) of 8000 pF at 25V. With a maximum power dissipation of 700W (Tc), it is suitable for demanding power conversion tasks. The IXTX8N150L is housed in a PLUS247™-3 package, facilitating through-hole mounting. This component finds application in power supplies, industrial motor control, and high-voltage switching circuits.
Additional Information
Series: LinearRoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 4A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 8V @ 250µA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 25 V |
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