IXTX660N04T4
DISC MSFT NCHTRENCHGATE-GEN4 TO-Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTX660N04T4 is a high-performance N-channel enhancement mode MOSFET from the Trench series, presented in a PLUS247™-3 package. This through-hole component is designed for demanding power applications, leveraging advanced gate trench technology for superior on-resistance and switching characteristics. Its robust construction and efficient thermal management make it suitable for use in industrial automation, power supplies, and motor control systems. The IXTX660N04T4 provides reliable performance for high-current switching and power conversion circuits where efficiency and durability are paramount.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | - |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
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