IXTX22N100L
MOSFET N-CH 1000V 22A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS's IXTX22N100L is an N-Channel Power MOSFET in the Linear series, packaged in a PLUS247™-3 through-hole configuration. This component offers a 1000 V drain-source voltage (Vdss) and a continuous drain current (Id) of 22 A at 25°C. With a maximum on-resistance (Rds On) of 600 mOhm at 11 A and 20 V, it is suitable for high-voltage switching applications. The device supports gate drive voltages and features a maximum power dissipation of 700 W at 25°C (Tc). Key parameters include a gate charge (Qg) of 270 nC at 15 V and input capacitance (Ciss) of 7050 pF at 25 V. This MOSFET is designed for demanding applications across industries such as power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: LinearRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 11A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7050 pF @ 25 V |
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