IXTX20N150
MOSFET N-CH 1500V 20A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTX20N150 is a high-voltage N-Channel MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 1500V and a continuous Drain Current (Id) of 20A at 25°C (Tc), this component offers robust performance. The Rds On (Max) is specified at 1 Ohm with an Id of 10A and Vgs of 10V. With a maximum power dissipation of 1250W (Tc) and a gate charge (Qg) of 215 nC at 10V, it is suitable for power conversion, industrial motor control, and high-voltage switching applications. The device utilizes MOSFET technology and is housed in a through-hole PLUS247™-3 package. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 25 V |
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