IXTV96N25T
MOSFET N-CH 250V 96A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTV96N25T is a high-performance N-Channel MOSFET from the Trench series. This device offers a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 96A at 25°C (Tc), with a maximum power dissipation of 625W (Tc). Key characteristics include a low on-resistance (Rds On) of 29mOhm at 500mA and 10V, and a gate charge (Qg) of 114 nC at 10V. It features an input capacitance (Ciss) of 6100 pF at 25V and a gate-source voltage tolerance of ±30V, with a threshold voltage (Vgs(th)) of 5V at 1mA. The IXTV96N25T is housed in a TO-220-3, Short Tab (PLUS220) package, suitable for through-hole mounting. This component is frequently utilized in power switching applications across industrial, automotive, and telecommunications sectors.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 25 V |
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