IXTV36N50PS
MOSFET N-CH 500V 36A PLUS-220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS PolarHV™ N-Channel Power MOSFET, part number IXTV36N50PS. This device features a 500V drain-source breakdown voltage and a continuous drain current capability of 36A at 25°C (Tc). With a low on-resistance of 170mOhm (max) at 500mA and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 540W (Tc). The N-Channel MOSFET is housed in a surface-mount PLUS-220SMD package, suitable for high-power applications across industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. Key parameters include a gate charge of 85nC (max) at 10V and input capacitance of 5500pF (max) at 25V. The device operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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