IXTV36N50P
MOSFET N-CH 500V 36A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTV36N50P is a PolarHV™ series N-Channel MOSFET designed for high voltage applications. This component features a drain-source voltage (Vdss) of 500 V and can handle a continuous drain current (Id) of 36 A at 25°C, with a maximum power dissipation of 540 W (Tc). The device offers a low on-resistance (Rds On) of 170 mOhm at 500 mA and 10 V. Key parameters include a gate charge (Qg) of 85 nC at 10 V and input capacitance (Ciss) of 5500 pF at 25 V. The IXTV36N50P is packaged in a through-hole PLUS220 package, suitable for demanding power switching applications in industries such as industrial power supplies and motor control. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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