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IXTV30N60PS

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IXTV30N60PS

MOSFET N-CH 600V 30A PLUS-220SMD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTV30N60PS is a 600V, 30A N-Channel MOSFET from the PolarHV™ series, housed in a surface mount PLUS-220SMD package. This device offers a maximum continuous drain current of 30A at 25°C (Tc) and a power dissipation of 540W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 240mOhm at 15A and 10V, and a gate charge (Qg) of 82 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 5050 pF at 25V. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 250µA. This component is suitable for applications in power supply design, industrial motor control, and renewable energy systems.

Additional Information

Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CasePLUS-220SMD
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs240mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)540W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackagePLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5050 pF @ 25 V

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