IXTV30N60P
MOSFET N-CH 600V 30A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTV30N60P is a PolarHV™ N-Channel MOSFET designed for high-voltage applications. This through-hole component features a 600 V drain-to-source voltage (Vdss) and a continuous drain current of 30 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 240 mOhm at 15 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 540 W (Tc), it is suitable for demanding power conversion and switching circuits. Key parameters include a gate charge (Qg) of 82 nC at 10 V and input capacitance (Ciss) of 5050 pF at 25 V. The IXTV30N60P is packaged in a TO-220-3, Short Tab (PLUS220) configuration and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5050 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGH28N60B3D1
IGBT 600V 66A 190W TO247AD
IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252
IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252
