IXTV30N50P
MOSFET N-CH 500V 30A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTV30N50P is a high-voltage N-channel Power MOSFET from the PolarHV™ series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 30 A at 25°C (Tc). With a maximum power dissipation of 460 W (Tc) and a low Rds On of 200 mOhm at 15 A and 10 V, it is suitable for demanding applications. The device is housed in a through-hole PLUS220 package, facilitating easy integration into various circuit designs. Key parameters include a gate charge (Qg) of 70 nC at 10 V and input capacitance (Ciss) of 4150 pF at 25 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly employed in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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