IXTV26N60P
MOSFET N-CH 600V 26A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTV26N60P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 26A at 25°C, with a maximum power dissipation of 460W (Tc). The Rds(On) is specified at 270mOhm at 500mA and 10V. Key parameters include Input Capacitance (Ciss) of 4150pF at 25V and Gate Charge (Qg) of 72nC at 10V. The device operates over a temperature range of -55°C to 150°C. Packaged in a through-hole PLUS220 (TO-220-3, Short Tab) configuration, this MOSFET is suitable for applications in power supplies and industrial motor control.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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