IXTV230N085T
MOSFET N-CH 85V 230A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTV230N085T is an N-Channel TrenchMV™ MOSFET designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 85 V and a continuous drain current (Id) of 230 A at 25°C, with a maximum Power Dissipation (Pd) of 550 W. The low on-resistance of 4.4 mOhm at 50 A and 10 V drive voltage is achieved through its advanced trench technology. Key parameters include a Gate Charge (Qg) of 187 nC and Input Capacitance (Ciss) of 9900 pF. The device is housed in a PLUS220 package for through-hole mounting and operates within an extended temperature range of -55°C to 175°C. This MOSFET is suitable for use in power conversion and switching applications across various industrial sectors.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 187 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 25 V |
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