IXTV22N60P
MOSFET N-CH 600V 22A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTV22N60P is an N-Channel enhancement mode MOSFET from the PolarHV™ series. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain current (Id) of 22A at 25°C (Tc). With a maximum power dissipation of 400W (Tc) and a low Rds(on) of 350mOhm at 11A and 10V, it is suitable for high-voltage switching applications. Key parameters include a gate charge (Qg) of 62nC at 10V and input capacitance (Ciss) of 3600pF at 25V. The device is housed in a TO-220-3, Short Tab (PLUS220) package for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). This component finds application in power supply units, motor control, and industrial power conversion.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGH28N60B3D1
IGBT 600V 66A 190W TO247AD
IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252
IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252
