IXTV22N50P
MOSFET N-CH 500V 22A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTV22N50P is an N-Channel enhancement mode MOSFET from the PolarHV™ series. This through-hole component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 22A at 25°C, with a maximum power dissipation of 350W (Tc). Key electrical parameters include a maximum Rds On of 270mOhm at 11A and 10V, and a typical gate charge (Qg) of 50 nC. The input capacitance (Ciss) is 2630 pF. Designed for demanding applications, this MOSFET is suitable for use in power supplies, motor control, and industrial automation. It is supplied in a TO-220-3, Short Tab (PLUS220) package.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2630 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGH28N60B3D1
IGBT 600V 66A 190W TO247AD
IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252
IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252
