IXTV200N10T
MOSFET N-CH 100V 200A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTV200N10T is an N-Channel TrenchMV™ MOSFET designed for high-power applications. This component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 200A at 25°C (Tc). The low on-resistance of 5.5mOhm at 50A and 10V drive voltage contributes to efficient power handling, with a maximum power dissipation of 550W (Tc). The gate charge (Qg) is 152 nC at 10V, and input capacitance (Ciss) is 9400 pF at 25V. Packaged in a through-hole TO-220-3, Short Tab (PLUS220) configuration, this MOSFET operates across a temperature range of -55°C to 175°C (TJ) and has a ±30V maximum gate-source voltage (Vgs). The IXTV200N10T is suitable for demanding applications in power switching, motor control, and industrial power supplies.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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