IXTV18N60P
MOSFET N-CH 600V 18A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTV18N60P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This through-hole component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 18A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), it is designed for demanding applications. The device exhibits a maximum Rds(On) of 420mOhm at 9A and 10V. Key parameters include a gate charge (Qg) of 49 nC and input capacitance (Ciss) of 2500 pF at specified voltages. The IXTV18N60P is housed in a TO-220-3, Short Tab (PLUS220) package, suitable for power supply, industrial motor control, and electric vehicle applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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