IXTV110N25TS
MOSFET N-CH 250V 110A PLUS220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTV110N25TS is a high-performance N-Channel MOSFET designed for demanding power applications. Featuring a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 110A at 25°C, this device offers a low on-resistance (Rds On) of 24mOhm at 55A and 10V Vgs. The surface mount PLUS-220SMD package facilitates efficient thermal management, supporting a maximum power dissipation of 694W at 25°C case temperature. Key parameters include a gate charge (Qg) of 157 nC at 10V and input capacitance (Ciss) of 9400 pF at 25V. This component is suitable for use in industrial power supplies, motor control, and high-power switching applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 694W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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