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IXTV03N400S

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IXTV03N400S

MOSFET N-CH 4000V 300MA PLUS220

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

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The IXYS IXTV03N400S is an N-Channel MOSFET designed for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 4000 V and a continuous Drain Current (Id) of 300mA at 25°C (Tc). With a maximum power dissipation of 130W (Tc), it is suitable for demanding power switching requirements. The MOSFET is housed in a PLUS-220SMD package, enabling surface mount integration. Key electrical characteristics include a gate charge (Qg) of 16.3 nC at 10V, input capacitance (Ciss) of 435 pF at 25V, and a maximum Rds On of 290 Ohm at 500mA and 10V. The operating temperature range is from -55°C to 150°C (TJ). This component is utilized in industries requiring high voltage isolation and switching, such as industrial power supplies and high-voltage test equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CasePLUS-220SMD
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C300mA (Tc)
Rds On (Max) @ Id, Vgs290Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)130W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)4000 V
Gate Charge (Qg) (Max) @ Vgs16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds435 pF @ 25 V

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