IXTV02N250S
MOSFET N-CH 2500V 200MA PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS presents the IXTV02N250S, an N-Channel MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 2500 V and a continuous drain current (Id) of 200mA at 25°C. Key parameters include a maximum Rds On of 450 Ohms at 50mA, 10V, and a gate charge (Qg) of 7.4 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 116 pF at 25V, and the threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA. The device supports a gate-source voltage (Vgs) range of ±20V and has a maximum power dissipation of 83W. The IXTV02N250S is housed in a PLUS-220SMD package, suitable for surface mount applications, and operates within a temperature range of -55°C to 150°C. This MOSFET is utilized in industries requiring robust high-voltage switching capabilities.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Rds On (Max) @ Id, Vgs | 450Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 2500 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 116 pF @ 25 V |
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