IXTU8N70X2
MOSFET N-CH 700V 8A TO251-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS Ultra X2 series IXTU8N70X2 is a 700V N-channel Power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current of 8A (Tc) and a maximum power dissipation of 150W (Tc). With a low Rds On of 500mOhm at 500mA and 10V, it minimizes conduction losses. Key parameters include a Vgs(th) of 4.5V (Max) @ 250µA and a gate charge of 12 nC @ 10V, facilitating efficient switching. The input capacitance (Ciss) is 800 pF (Max) @ 10V. The device is housed in a TO-251-3 (IPAK) package with through-hole mounting. It operates across a wide temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±30V. This MOSFET is suitable for use in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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