IXTU5N50P
MOSFET N-CH 500V 4.8A TO252Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTU5N50P is an N-Channel Power MOSFET from the Polar series, designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain current (Id) of 4.8A at 25°C with a maximum power dissipation of 89W (Tc). The Rds(On) is specified at a maximum of 1.4 Ohms at 2.4A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 12.6 nC at 10V and input capacitance (Ciss) of 620 pF at 25V. It is housed in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. The IXTU5N50P is utilized in power supply units, industrial motor controls, and lighting applications. It operates over a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTH22N50P
MOSFET N-CH 500V 22A TO247
IXTA50N20P
MOSFET N-CH 200V 50A TO263
IXTK140N30P
MOSFET N-CH 300V 140A TO264
