IXTU2N80P
MOSFET N-CH 800V 2A TO251Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTU2N80P is an N-Channel Power MOSFET from the PolarHV™ series. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 2 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 6 Ohms at 1 A and 10 V gate-source voltage. With a gate charge (Qg) of 10.6 nC (max) at 10 V and input capacitance (Ciss) of 440 pF (max) at 25 V, it is suitable for high-voltage switching applications. The MOSFET has a maximum power dissipation of 70 W (Tc) and is housed in a TO-251AA package for through-hole mounting. Its operating temperature range is -55°C to 150°C. This component is utilized in industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGH28N60B3D1
IGBT 600V 66A 190W TO247AD
IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252
IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252
