IXTU1R4N60P
MOSFET N-CH 600V 1.4A TO251Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTU1R4N60P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 1.4 A at 25°C, with a maximum power dissipation of 50 W (Tc). The IXTU1R4N60P is designed for through-hole mounting in a TO-251AA package. Key electrical characteristics include a maximum on-resistance (Rds On) of 9 Ohms at 700 mA and 10 V, and a gate charge (Qg) of 5.2 nC at 10 V. Input capacitance (Ciss) is rated at a maximum of 140 pF at 25 V. This device operates within a temperature range of -55°C to 150°C. Applications for this component include high-voltage power supplies and general-purpose switching.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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