IXTU12N06T
MOSFET N-CH 60V 12A TO251Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTU12N06T is a high-performance N-Channel Power MOSFET from the Trench series. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). With a maximum power dissipation of 33W (Tc), it is suitable for demanding applications. The device offers a low on-resistance of 85mOhm at 6A and 10V Vgs, and a gate charge of 3.4 nC at 10V. Its TO-251AA package with through-hole mounting facilitates integration into various circuit designs. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is utilized in industries such as industrial automation, power supplies, and automotive electronics.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 256 pF @ 25 V |
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