IXTU05N120
MOSFET N-CH 1200V 500MA TO251Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTU05N120 is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous Drain Current (Id) of 500mA at 25°C (Tc). The IXTU05N120 is housed in a TO-251AA (IPAK) package, offering a through-hole mounting solution. Its Metal Oxide technology ensures efficient switching and power handling. This MOSFET is suitable for use in power conversion systems, industrial control, and high-voltage power supplies. The IXYS IXTU05N120 is supplied in tube packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-251AA |
| Drain to Source Voltage (Vdss) | 1200 V |
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