IXTU05N100
MOSFET N-CH 1000V 750MA TO251Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTU05N100 is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 750mA at 25°C. The device offers a maximum on-resistance (Rds On) of 17 Ohms at 375mA and 10V Vgs, with a Gate Charge (Qg) of 7.8 nC at 10V. Its input capacitance (Ciss) is a maximum of 260 pF at 25V. The IXTU05N100 is packaged in a TO-251AA (IPAK) through-hole configuration and supports a maximum power dissipation of 40W. Operating temperatures range from -55°C to 150°C. This MOSFET is suitable for power conversion and control applications in industries such as industrial automation and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA (Tc) |
| Rds On (Max) @ Id, Vgs | 17Ohm @ 375mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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