IXTU02N50D
MOSFET N-CH 500V 200MA TO251Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTU02N50D is a depletion-mode N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 200mA at 25°C (Tc). With a maximum on-resistance (Rds On) of 30 Ohms at 50mA and 0V gate-source voltage, it offers efficient switching characteristics. The device is packaged in a TO-251AA (IPAK) through-hole configuration and supports an operating temperature range of -55°C to 150°C. Its low threshold gate voltage (Vgs(th)) of 5V at 25µA and input capacitance (Ciss) of 120 pF at 25V make it suitable for various power control circuits. The IXYS IXTU02N50D is utilized in industries requiring robust high-voltage operation, such as industrial power supplies and advanced control systems. Power dissipation is rated at 1.1W (Ta) and 25W (Tc).
Additional Information
Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Rds On (Max) @ Id, Vgs | 30Ohm @ 50mA, 0V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.1W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 25µA |
| Supplier Device Package | TO-251AA |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
| Qualification | - |
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