IXTU01N100D
MOSFET N-CH 1000V 400MA TO251Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTU01N100D is an N-Channel depletion mode MOSFET with a Vds of 1000V. This component features a continuous drain current (Id) of 400mA at 25°C (Tc) and a maximum power dissipation of 25W (Tc) or 1.1W (Ta). The IXYS Depletion series device offers a low Rds On of 80 Ohm maximum at 50mA, 0V Vgs. Key parameters include a gate charge (Qg) of 5.8 nC at 5V and input capacitance (Ciss) of 100 pF at 25V. The device is housed in a TO-251AA package and is suitable for through-hole mounting. Operating temperature range is -55°C to 150°C. This MOSFET is utilized in power control applications across various industries.
Additional Information
Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
| Rds On (Max) @ Id, Vgs | 80Ohm @ 50mA, 0V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.1W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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