IXTU01N100
MOSFET N-CH 1000V 100MA TO251Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTU01N100 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 100mA at 25°C. With a maximum power dissipation of 25W (Tc), it is suitable for demanding power control circuits. The device offers a low on-resistance of 80 Ohms maximum at 100mA and 10V gate drive. Key parameters include a Gate Charge (Qg) of 6.9 nC maximum at 10V and Input Capacitance (Ciss) of 54 pF maximum at 25V. The IXTU01N100 is housed in a TO-251AA package, a through-hole mounting type for robust integration. Operating temperature range is from -55°C to 150°C. This MOSFET is utilized in industries such as industrial power supplies and high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Tc) |
| Rds On (Max) @ Id, Vgs | 80Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-251AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 54 pF @ 25 V |
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