IXTT88N15
MOSFET N-CH 150V 88A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTT88N15 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 88A at 25°C (Tc). With a low on-resistance (Rds On) of 22mOhm at 44A and 10V, it ensures efficient power transfer. The device features a maximum power dissipation of 400W (Tc) and a gate charge (Qg) of 170 nC at 10V, facilitating fast switching speeds. Its TO-268AA package allows for robust surface mounting. Key parameters include an input capacitance (Ciss) of 4000 pF at 25V and a threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is suitable for use in industrial power supplies, automotive systems, and renewable energy applications. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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