IXTT75N10L2
MOSFET N-CH 100V 75A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTT75N10L2 is an N-Channel MOSFET from the Linear L2™ series, designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 75A at 25°C. The Rds On is specified at a maximum of 21mOhm at 500mA and 10V gate drive. With a maximum power dissipation of 400W at 25°C, this device is suitable for demanding thermal environments. The IXTT75N10L2 utilizes surface mount technology, housed in a TO-268AA package. Key parameters include a gate charge (Qg) of 215 nC at 10V and input capacitance (Ciss) of 8100 pF at 25V. This MOSFET is commonly employed in power supply, motor control, and industrial automation sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: Linear L2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8100 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTQ60N20L2
MOSFET N-CH 200V 60A TO3P
IXTT110N10L2
MOSFET N-CH 100V 110A TO268
IXTA15N50L2
MOSFET N-CH 500V 15A TO263
