IXTT75N10
MOSFET N-CH 100V 75A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTT75N10 is a high-performance N-Channel Power MOSFET from the MegaMOS™ series, designed for demanding applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 75A at 25°C (Tc). With a low on-resistance (Rds On) of 20mOhm at 37.5A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 300W (Tc) and a gate charge (Qg) of 260 nC at 10V. Key parameters include input capacitance (Ciss) of 4500 pF at 25V and a threshold voltage (Vgs(th)) of 4V at 4mA. The IXTT75N10 is housed in a TO-268AA surface mount package, suitable for robust thermal management. This component finds application in power conversion, motor control, and electric vehicle systems.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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