IXTT72N20
MOSFET N-CH 200V 72A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTT72N20 is an N-Channel power MOSFET designed for high-efficiency power switching applications. This device features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 72A at 25°C (Tc). With a maximum power dissipation of 400W (Tc), it is suitable for demanding applications. The IXTT72N20 exhibits a low on-resistance (Rds On) of 33mOhm at 500mA and 10V, contributing to reduced conduction losses. Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 4400 pF at 25V. It is packaged in a TO-268AA (TO-268-3, D3PAK) surface-mount configuration, offering robust thermal performance. This MOSFET is utilized in industries such as industrial power supplies, motor control, and electric vehicle charging systems. The maximum gate-source voltage is ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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