IXTT60N20L2
MOSFET N-CH 200V 60A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTT60N20L2 is an N-Channel Power MOSFET from the Linear L2™ series, featuring a 200V drain-source voltage and a continuous drain current capability of 60A at 25°C (Tc). This device offers a low on-resistance of 45mOhm maximum at 30A and 10V Vgs, with a gate charge of 255 nC maximum at 10V. The input capacitance (Ciss) is 10500 pF maximum at 25V. Designed for high-power applications, it boasts a maximum power dissipation of 540W (Tc). The IXTT60N20L2 is housed in a TO-268AA package, facilitating surface mounting. Typical industries utilizing this component include industrial power supplies, automotive systems, and power switching applications. The device operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage range of ±20V.
Additional Information
Series: Linear L2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 25 V |
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