IXTT60N10
MOSFET N-CH 100V 60A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTT60N10 is a high-performance N-Channel Power MOSFET designed for demanding applications. This TO-268AA packaged device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 60A at 25°C, with a maximum power dissipation of 300W (Tc). The on-resistance (Rds On) is specified at a low 20mOhm at 30A and 10V gate drive voltage. Key parameters include input capacitance (Ciss) of 3200pF (max) at 25V and gate charge (Qg) of 110nC (max) at 10V. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |
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