IXTT50P085
MOSFET P-CH 85V 50A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTT50P085 is a P-channel MOSFET designed for high-power applications. This device features a Drain-to-Source Voltage (Vdss) of 85V and a continuous Drain current (Id) of 50A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance of 55mOhm at 25A and 10V (Vgs) minimizes conduction losses. Key parameters include a Gate Charge (Qg) of 150nC (max) at 10V and Input Capacitance (Ciss) of 4200pF (max) at 25V. The IXTT50P085 is housed in a TO-268AA (TO-268-3, D3PAK) surface-mount package, enabling efficient thermal management. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in power switching, motor control, and battery management systems across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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