IXTT440N055T2
MOSFET N-CH 55V 440A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTT440N055T2 is an N-Channel power MOSFET from the TrenchT2™ series, featuring a 55V Drain-Source Voltage (Vdss). This component offers a continuous drain current capability of 440A at 25°C (Tc) and a maximum power dissipation of 1000W (Tc). The device exhibits a low on-resistance of 1.8mOhm at 100A and 10V gate drive. Key parameters include a gate charge (Qg) of 405 nC @ 10 V and input capacitance (Ciss) of 25000 pF @ 25 V. The IXTT440N055T2 is housed in a TO-268AA surface mount package, commonly used in high-power switching applications across industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. It operates within a junction temperature range of -55°C to 175°C.
Additional Information
Series: TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 440A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 405 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25000 pF @ 25 V |
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