IXTT440N04T4HV
MOSFET N-CH 40V 440A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTT440N04T4HV is an N-Channel Power MOSFET designed for high-current switching applications. This Trench MOSFET features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 440A at 25°C (Tc), with a maximum power dissipation of 940W (Tc). The ON-resistance (Rds On) is a low 1.25mOhm at 100A and a gate-source voltage (Vgs) of 10V.
Key parameters include a gate charge (Qg) of 480nC at 10V and input capacitance (Ciss) of 26000pF at 25V. The device operates with a drive voltage of 10V and has a maximum Vgs of ±15V. Its threshold voltage (Vgs(th)) is 4V at 250µA.
The IXTT440N04T4HV is housed in a TO-268HV surface mount package, making it suitable for demanding thermal environments. This component is utilized in industries requiring robust power management, such as electric vehicle charging, industrial motor control, and high-power power supplies. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 440A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 940W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-268HV (IXTT) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 26000 pF @ 25 V |
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