IXTT30N60P
MOSFET N-CH 600V 30A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTT30N60P is a high-performance N-Channel Power MOSFET from the Polar series, designed for demanding applications. This device features a 600 V drain-source breakdown voltage and a continuous drain current capability of 30 A at 25°C (Tc), with a maximum power dissipation of 540 W (Tc). The IXTT30N60P offers a low on-resistance of 240 mOhm at 15 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 82 nC at 10 V and input capacitance (Ciss) of 5050 pF at 25 V. Packaged in a TO-268AA (TO-268-3, D3PAK) surface-mount configuration, this MOSFET is suitable for use in power supply units, industrial motor control, and advanced power conversion systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5050 pF @ 25 V |
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