IXTT20N50D
MOSFET N-CH 500V 20A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTT20N50D is an N-Channel Depletion Mode Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 20A at 25°C, with a maximum power dissipation of 400W. The Rds On is specified at 330mOhm maximum at 10A and 10V gate drive. Key parameters include a gate charge (Qg) of 125 nC maximum at 10V and an input capacitance (Ciss) of 2500 pF maximum at 25V. The device operates across a temperature range of -55°C to 150°C. Packaged in a TO-268AA surface mount configuration, this MOSFET is suitable for power switching applications in industrial and high-power systems. It utilizes Metal Oxide technology. The maximum gate-source voltage (Vgs) is ±30V, and the threshold voltage (Vgs(th)) is 3.5V maximum at 250mA.
Additional Information
Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 10A, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTU02N50D
MOSFET N-CH 500V 200MA TO251
IXTY02N50D
MOSFET N-CH 500V 200MA TO252
IXTP02N50D
MOSFET N-CH 500V 200MA TO220AB
