IXTT1N100
MOSFET N-CH 1000V 1.5A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTT1N100 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-to-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 1.5A at 25°C, with a maximum power dissipation of 60W (Tc). It offers a low on-resistance (Rds On) of 11 Ohms maximum at 1A and 10V gate-source voltage, with typical input capacitance (Ciss) of 480 pF at 25V. The IXTT1N100 utilizes advanced MOSFET technology and is housed in a TO-268AA surface-mount package. This component is suitable for use in power supply circuits, industrial automation, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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