IXTT16N10D2
MOSFET N-CH 100V 16A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTT16N10D2 is an N-Channel Depletion Mode MOSFET designed for high-power applications. This component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C. The IXTT16N10D2 offers a maximum on-resistance (Rds On) of 64mOhm at 8A and 0V gate-source voltage (Vgs). Its depletion mode operation allows for turn-on with zero gate voltage, simplifying drive circuitry. The device is packaged in a TO-268AA (D3PAK) surface-mount package, providing excellent thermal performance with a power dissipation of 830W (Tc). Key electrical characteristics include a gate charge (Qg) of 225 nC at 5V and an input capacitance (Ciss) of 5700 pF at 25V. This MOSFET is suitable for use in power switching, motor control, and power factor correction circuits across various industrial sectors. The operating temperature range is -55°C to 175°C.
Additional Information
Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 8A, 0V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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