IXTT12N140
MOSFET N-CH 1400V 12A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTT12N140 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1400V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum power dissipation of 890W (Tc) and an Rds On of 2Ohm at 6A and 10V, it offers efficient switching characteristics. The device utilizes MOSFET technology and is housed in a TO-268AA surface mount package. Key parameters include a gate charge (Qg) of 106 nC at 10V and input capacitance (Ciss) of 3720 pF at 25V. This MOSFET is suitable for use in power supply and industrial automation applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1400 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 25 V |
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